SULFUR DOPING IN AL0.4GA0.6AS

[1] AMBIPOLAR TRANSPORT IN DOUBLE HETEROSTRUCTURE INJECTION-LASERS [J]. ELECTRON DEVICE LETTERS, 1980, 1 (04): : 58 - 60

[2] CASEY HC, 1978, HETEROSTRUCTURE LA B, P109

[3] LIQUID-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GA1-XALXAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 211 - 216

[4] TRIGGERABLE SEMICONDUCTOR-LASERS AND LIGHT-COUPLED LOGIC [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 1919 - 1921

[5] SULFUR-RELATED TRAP IN GAAS1-XPX [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6334 - 6343

[6] EVANS CA, 1980, P SEMI INSULATING 3

[7] THEORY OF SUBSTITUTIONAL DEEP TRAPS IN COVALENT SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (12) : 810 - 813

[8] HJALMARSON HP, 7TH ANN C PHYS COMP

[9] KANG CS, 1969, 1968 P INT S GALL AR, V7, P18

[10] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030

[1] AMBIPOLAR TRANSPORT IN DOUBLE HETEROSTRUCTURE INJECTION-LASERS [J]. ELECTRON DEVICE LETTERS, 1980, 1 (04): : 58 - 60

[2] CASEY HC, 1978, HETEROSTRUCTURE LA B, P109

[3] LIQUID-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GA1-XALXAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 211 - 216

[4] TRIGGERABLE SEMICONDUCTOR-LASERS AND LIGHT-COUPLED LOGIC [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 1919 - 1921

[5] SULFUR-RELATED TRAP IN GAAS1-XPX [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6334 - 6343

[6] EVANS CA, 1980, P SEMI INSULATING 3

[7] THEORY OF SUBSTITUTIONAL DEEP TRAPS IN COVALENT SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (12) : 810 - 813

[8] HJALMARSON HP, 7TH ANN C PHYS COMP

[9] KANG CS, 1969, 1968 P INT S GALL AR, V7, P18

[10] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030