DONOR-LEVELS ANALYSIS IN GAAIAS DOUBLE HETEROSTRUCTURE

被引：24

作者：

BALLAND, B ^{[1
]}

VINCENT, G ^{[1
]}

BOIS, D ^{[1
]}

HIRTZ, P ^{[1
]}

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 01期

关键词：

D O I：

10.1063/1.90599

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Capacitance versus temperature, capacitance, and current DLTS, together with optical excitation, are used to analyze the donors in the n-type Sn-doped GaAlAs layer of LED double heterostructures. Two donor levels are found to be associated with Sn. One of them shows a persistent photoconductivity effect at low temperature.

引用

收藏

页码：108 / 110

页数：3

相关论文

共 10 条

[1] TRANSIENT CURRENT TRAP SPECTROSCOPY (TCTS) IN GAAS-GAALAS HETEROJUNCTIONS [J].

BALLAND, B ;

BLONDEAU, R ;

PINARD, P .

SOLID STATE COMMUNICATIONS, 1978, 26 (11) :679-683

[2] DEEP LEVELS IN LED GAAS-GAALAS [J].

BALLAND, B .

REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (05) :232-240

[3] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].

HENRY, CH ;

LANG, DV .

PHYSICAL REVIEW B, 1977, 15 (02) :989-1016

[4]

HUCHINSON PW, 1975, PHILOS MAG, V32, P745

[5] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022

[6] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J].

LANG, DV ;

LOGAN, RA .

PHYSICAL REVIEW LETTERS, 1977, 39 (10) :635-639

[7] LONG-LIFETIME PHOTOCONDUCTIVITY EFFECT IN N-TYPE GAAIAS [J].

NELSON, RJ .

APPLIED PHYSICS LETTERS, 1977, 31 (05) :351-353

[8]

PANISH MB, 1973, J APPL PHYS, V44, P6

[9]

PETROFF PM, 1976, B AM PHYS SOC, V21, P265

[10] TE AND GE - DOPING STUDIES IN GA1-XA1XAS [J].

SPRINGTHORPE, AJ ;

KING, FD ;

BECKE, A .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) :101-118