PHOTOCAPACITANCE STUDY OF PRESSURE-INDUCED DEEP DONORS IN GAAS-SI

被引:52
作者
LI, MF
YU, PY
WEBER, ER
HANSEN, W
机构
[1] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720
[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720
[3] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & CHEM SCI,BERKELEY,CA 94720
[4] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720
来源
PHYSICAL REVIEW B | 1987年 / 36卷 / 08期
关键词
D O I
10.1103/PhysRevB.36.4531
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:4531 / 4534
页数:4
相关论文
共 14 条
[1]   DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS [J].
CHANTRE, A ;
VINCENT, G ;
DUBOIS .
PHYSICAL REVIEW B, 1981, 23 (10) :5335-5359
[2]   TECHNIQUE FOR HIGH-PRESSURE ELECTRICAL-CONDUCTIVITY MEASUREMENT IN DIAMOND ANVIL CELLS AT CRYOGENIC TEMPERATURES [J].
ERSKINE, D ;
YU, PY ;
MARTINEZ, G .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1987, 58 (03) :406-411
[3]   THEORY OF LIGHT ABSORPTION AND NON-RADIATIVE TRANSITIONS IN F-CENTRES [J].
HUANG, K ;
RHYS, A .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1950, 204 (1078) :406-423
[4]   WAVE-FUNCTIONS AND OPTICAL CROSS-SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS [J].
JAROS, M .
PHYSICAL REVIEW B, 1977, 16 (08) :3694-3706
[5]   TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].
LANG, DV ;
LOGAN, RA ;
JAROS, M .
PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030
[6]   LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J].
LANG, DV ;
LOGAN, RA .
PHYSICAL REVIEW LETTERS, 1977, 39 (10) :635-639
[7]  
LANG DV, 1985, DEEP CTR SEMICONDUCT, P489
[8]   LATTICE-RELAXATION OF PRESSURE-INDUCED DEEP CENTERS IN GAAS-SI [J].
LI, MF ;
YU, PY ;
WEBER, ER ;
HANSEN, W .
APPLIED PHYSICS LETTERS, 1987, 51 (05) :349-351
[9]   DIRECT EVIDENCE FOR THE DX CENTER BEING A SUBSTITUTIONAL DONOR IN ALGAAS ALLOY SYSTEM [J].
MIZUTA, M ;
TACHIKAWA, M ;
KUKIMOTO, H ;
MINOMURA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02) :L143-L146
[10]   WAVE-NUMBER-DEPENDENT DIELECTRIC FUNCTION OF SEMICONDUCTORS [J].
PENN, DR .
PHYSICAL REVIEW, 1962, 128 (05) :2093-+