LATTICE-RELAXATION OF PRESSURE-INDUCED DEEP CENTERS IN GAAS-SI

[1] PRESSURE-DEPENDENCE OF THE ELECTRON-CAPTURE CROSS-SECTION OF THE B-HOLE TRAP IN LIQUID-PHASE EPITAXIAL GALLIUM-ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (07) : 677 - 679

[2] EFFECT OF THE SILICON DOPING CONCENTRATION ON THE RECOMBINATION KINETICS OF DX CENTERS IN AL0.35GA0.65AS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (16) : 1093 - 1095

[3] TECHNIQUE FOR HIGH-PRESSURE ELECTRICAL-CONDUCTIVITY MEASUREMENT IN DIAMOND ANVIL CELLS AT CRYOGENIC TEMPERATURES [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1987, 58 (03) : 406 - 411

[4] Henning J. C. M., 1986, Materials Science Forum, V10-12, P429, DOI 10.4028/www.scientific.net/MSF.10-12.429

[5] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016

[6] HJALMARSON HP, 1986, APPL PHYS LETT, V48, P657

[7] THEORY OF LIGHT ABSORPTION AND NON-RADIATIVE TRANSITIONS IN F-CENTRES [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1950, 204 (1078): : 406 - 423

[8] HUANG K, 1981, PROGR PHYSICS, V1, P31

[9] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030

[10] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1977, 39 (10) : 635 - 639

[1] PRESSURE-DEPENDENCE OF THE ELECTRON-CAPTURE CROSS-SECTION OF THE B-HOLE TRAP IN LIQUID-PHASE EPITAXIAL GALLIUM-ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (07) : 677 - 679

[2] EFFECT OF THE SILICON DOPING CONCENTRATION ON THE RECOMBINATION KINETICS OF DX CENTERS IN AL0.35GA0.65AS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (16) : 1093 - 1095

[3] TECHNIQUE FOR HIGH-PRESSURE ELECTRICAL-CONDUCTIVITY MEASUREMENT IN DIAMOND ANVIL CELLS AT CRYOGENIC TEMPERATURES [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1987, 58 (03) : 406 - 411

[4] Henning J. C. M., 1986, Materials Science Forum, V10-12, P429, DOI 10.4028/www.scientific.net/MSF.10-12.429

[5] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016

[6] HJALMARSON HP, 1986, APPL PHYS LETT, V48, P657

[7] THEORY OF LIGHT ABSORPTION AND NON-RADIATIVE TRANSITIONS IN F-CENTRES [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1950, 204 (1078): : 406 - 423

[8] HUANG K, 1981, PROGR PHYSICS, V1, P31

[9] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030

[10] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1977, 39 (10) : 635 - 639