FINE-STRUCTURE OF THE ALLOY-BROADENED THERMAL EMISSION-SPECTRA FROM DX CENTERS IN GAALAS

被引：38

作者：

CALLEJA, E

GOMEZ, A

MUNOZ, E

CAMARA, P

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 22期

关键词：

D O I：

10.1063/1.99611

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1877 / 1879

页数：3

共 11 条

[1] ORIGIN OF THE NONEXPONENTIAL THERMAL EMISSION KINETICS OF DX CENTERS IN GAALAS [J].

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WRIGHT, SL ;

HEIBLUM, M .

APPLIED PHYSICS LETTERS, 1986, 49 (11) :657-659

[2] EFFECT OF THE SILICON DOPING CONCENTRATION ON THE RECOMBINATION KINETICS OF DX CENTERS IN AL0.35GA0.65AS [J].

CASWELL, NS ;

MOONEY, PM ;

WRIGHT, SL ;

SOLOMON, PM .

APPLIED PHYSICS LETTERS, 1986, 48 (16) :1093-1095

[3] NOVEL METHOD TO DETERMINE CAPTURE CROSS-SECTION ACTIVATION-ENERGIES BY DEEP-LEVEL TRANSIENT SPECTROSCOPY TECHNIQUES [J].

CRIADO, J ;

GOMEZ, A ;

CALLEJA, E ;

MUNOZ, E .

APPLIED PHYSICS LETTERS, 1988, 52 (08) :660-661

[4] DEEP LEVEL TRANSIENT SPECTROSCOPY SIGNATURE ANALYSIS OF DX CENTERS IN ALGAAS AND GAASP [J].

CRIADO, J ;

GOMEZ, A ;

MUNOZ, E ;

CALLEJA, E .

APPLIED PHYSICS LETTERS, 1986, 49 (26) :1790-1792

[5]

CRIADO J, COMMUNICATION

[6] A DETAILED INVESTIGATION OF THE D-X CENTER AND OTHER TRAP LEVELS IN GAAS-ALXGA1-XAS MODULATION-DOPED HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

DHAR, S ;

HONG, WP ;

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NASHIMOTO, Y ;

JUANG, FY .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) :698-706

[7] STUDY OF NON-EXPONENTIAL ELECTRON-CAPTURE BY THE MAIN ELECTRON TRAP IN GAAS0.62P0.38 [J].

KANIEWSKA, M ;

KANIEWSKI, J .

SOLID STATE COMMUNICATIONS, 1985, 53 (05) :485-488

[8]

OHNO H, 1985, J VAC SCI TECHNOL B, V3, P944

[9] DEEP LEVEL TRANSIENT SPECTROSCOPY EVALUATION OF NON-EXPONENTIAL TRANSIENTS IN SEMICONDUCTOR ALLOYS [J].

OMLING, P ;

SAMUELSON, L ;

GRIMMEISS, HG .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5117-5122

[10] ALLOY FLUCTUATION IN MIXED COMPOUND SEMICONDUCTORS AS STUDIED BY DEEP LEVEL TRANSIENT SPECTROSCOPY [J].

YOSHINO, J ;

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MATSUDA, N ;

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KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (01) :L29-L31

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