ALLOY FLUCTUATION IN MIXED COMPOUND SEMICONDUCTORS AS STUDIED BY DEEP LEVEL TRANSIENT SPECTROSCOPY

被引：74

作者：

YOSHINO, J ^{[1
]}

TACHIKAWA, M ^{[1
]}

MATSUDA, N ^{[1
]}

MIZUTA, M ^{[1
]}

KUKIMOTO, H ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,IMAGING SCI & ENGN LAB,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 01期

关键词：

D O I：

10.1143/JJAP.23.L29

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L29 / L31

页数：3

共 11 条

[1] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].

HENRY, CH ;

LANG, DV .

PHYSICAL REVIEW B, 1977, 15 (02) :989-1016

[2] ALLOY CLUSTERING IN ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES [J].

HOLONYAK, N ;

LAIDIG, WD ;

VOJAK, BA ;

HESS, K ;

COLEMAN, JJ ;

DAPKUS, PD ;

BARDEEN, J .

PHYSICAL REVIEW LETTERS, 1980, 45 (21) :1703-1706

[3]

KUKIMOTO H, 1983, SEMICOND INSUL, V5, P337

[4]

MATSUSHIMA Y, 1979, APPL PHYS LETT, V35, P446

[5] AL-GA DISORDER IN ALXGA1-XAS ALLOYS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MILLER, RC ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1981, 39 (04) :334-335

[6] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J].

MIMURA, T ;

HIYAMIZU, S ;

FUJII, T ;

NANBU, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :L225-L227

[7] DEEP LEVELS IN INP GROWN BY MOCVD [J].

OGURA, M ;

MIZUTA, M ;

HASE, N ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (04) :658-662

[8]

PAULING L, 1960, NATURE CHEM BOND, pCH4

[9] THE ELECTRON TRAP ASSOCIATED WITH AN ANION VACANCY IN ZNSE AND ZNSXSE1-X [J].

SHIRAKAWA, Y ;

KUKIMOTO, H .

SOLID STATE COMMUNICATIONS, 1980, 34 (05) :359-361

[10] LASER OSCILLATION FROM QUANTUM STATES IN VERY THIN GAAS-AL0.2GA0.8AS MULTILAYER STRUCTURES [J].

VANDERZIEL, JP ;

DINGLE, R ;

MILLER, RC ;

WIEGMANN, W ;

NORDLAND, WA .

APPLIED PHYSICS LETTERS, 1975, 26 (08) :463-465

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