DEEP LEVEL TRANSIENT SPECTROSCOPY EVALUATION OF NON-EXPONENTIAL TRANSIENTS IN SEMICONDUCTOR ALLOYS

被引：191

作者：

OMLING, P

SAMUELSON, L

GRIMMEISS, HG

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.332733

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5117 / 5122

页数：6

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