DEFECT STATES IN ELECTRON-IRRADIATED INGAASP

被引：10

作者：

LEVINSON, M

TEMKIN, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 07期

关键词：

D O I：

10.1063/1.94017

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：605 / 607

页数：3

共 14 条

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[5] DEFECT STATES IN ELECTRON BOMBARDED N-INP [J].

LEVINSON, M ;

BENTON, JL ;

TEMKIN, H ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :990-992

[6]

LEVINSON M, UNPUB J ELECTRON MAT

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LANG, DV ;

KIMERLING, LC .

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[8] STUDY OF MAIN ELECTRON TRAP IN GA1-XINXAS ALLOYS [J].

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MITONNEAU, A ;

HALLAIS, J .

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[9]

MIRCEA A, 1979, I PHYS C SER, V46, P82

[10] OBSERVATION OF DEEP IMPURITY LEVELS IN IN0.85GA0.15AS0.39P0.61 [J].

SASAI, Y ;

YAMAZOE, Y ;

OKUYAMA, M ;

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HAMAKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (07) :1415-1416

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