OBSERVATION OF ATHERMAL DEFECT ANNEALING IN GAP

被引：119

作者：

LANG, DV ^{[1
]}

KIMERLING, LC ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 05期

关键词：

D O I：

10.1063/1.88726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：248 / 250

页数：3

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共 9 条

[1] REDUCED DEGRADATION IN INXGA1-XAS ELECTROLUMINESCENT DIODES
ETTENBERG, M
NUESE, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 2137 - 2142
[2] THERMALLY STIMULATED CURRENT MEASUREMENTS IN N-TYPE LEC GAP
FABRE, E
BHARGAVA, RN
ZWICKER, WK
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (02) : 409 - 430
[3] Kimerling L. C., 1975, Lattice Defects in Semiconductors, 1974, P589
[4] KIMERLING LC, 1975, IEEE DEVICE RESEARCH
[5] NONRADIATIVE RECOMBINATION AT DEEP LEVELS IN GAAS AND GAP BY LATTICE-RELAXATION MULTIPHONON EMISSION
LANG, DV
HENRY, CH
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (22) : 1525 - 1528
[6] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[7] OBSERVATION OF RECOMBINATION-ENHANCED DEFECT REACTIONS IN SEMICONDUCTORS
LANG, DV
KIMERLING, LC
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (08) : 489 - 492
[8] SMITH BT, UNPUBLISHED
[9] THEORY OF RECOMBINATION-ENHANCED DEFECT REACTIONS IN SEMICONDUCTORS
WEEKS, JD
TULLY, JC
KIMERLING, LC
[J]. PHYSICAL REVIEW B, 1975, 12 (08): : 3286 - 3292