ALLOY FLUCTUATION EFFECT ON ELECTRONIC-TRANSITION PROPERTIES OF DX CENTER OBSERVED WITH MODIFIED DEEP LEVEL TRANSIENT SPECTROSCOPY

被引:28
作者
TAKIKAWA, M
OZEKI, M
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 03期
关键词
D O I
10.1143/JJAP.24.303
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:303 / 310
页数:8
相关论文
共 22 条
[1]  
BELLESSA J, 1983, I PHYS C SER, V65, P529
[2]   SULFUR-RELATED TRAP IN GAAS1-XPX [J].
CRAVEN, RA ;
FINN, D .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) :6334-6343
[3]   PHOTOCONDUCTIVITY EFFECTS IN EXTREMELY HIGH MOBILITY MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES [J].
DRUMMOND, TJ ;
KOPP, W ;
FISCHER, R ;
MORKOC, H ;
THORNE, RE ;
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1238-1240
[4]   ELECTRICAL-PROPERTIES OF SI-DOPED ALXGA1-XAS LAYERS GROWN BY MBE [J].
ISHIKAWA, T ;
SAITO, J ;
SASA, S ;
HIYAMIZU, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (11) :L675-L676
[5]   PERSISTENT PHOTOCONDUCTIVITY IN (AL,GA)AS/GAAS MODULATION DOPED STRUCTURES - DEPENDENCE ON STRUCTURE AND GROWTH TEMPERATURE [J].
KLEM, J ;
MASSELINK, WT ;
ARNOLD, D ;
FISCHER, R ;
DRUMMOND, TJ ;
MORKOC, H ;
LEE, K ;
SHUR, MS .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5214-5217
[6]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[7]   TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].
LANG, DV ;
LOGAN, RA ;
JAROS, M .
PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030
[8]   LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J].
LANG, DV ;
LOGAN, RA .
PHYSICAL REVIEW LETTERS, 1977, 39 (10) :635-639
[9]  
LANG DV, 1979, I PHYS C SER, V43, P433
[10]  
LEE K, 1983, IEEE T ELECTRON DEV, V30, P207