Light-induced ferromagnetism in III-V-based diluted magnetic semiconductor heterostructures

被引：83

作者：

Munekata, H

Abe, T

Koshihara, S

Oiwa, A

Hirasawa, M

Katsumoto, S

Iye, Y

Urano, C

Takagi, H

机构：

[1] TOKYO INST TECHNOL,DEPT APPL PHYS,MEGURO KU,TOKYO 152,JAPAN

[2] UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 08期

关键词：

D O I：

10.1063/1.364889

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report for the first time the occurrence of light-induced ferromagnetic order in the III-V-based diluted magnetic semiconductor heterostructures (In,Mn)As/GaSb. We believe that the phenomenon is based on the generation of excess carriers (holes) in the (In,Mn)As layer by the irradiation of light, which enhances a carrier-mediated ferromagnetic interaction between Mn ions. (C) 1997 American Institute of Physics.

引用

页码：4862 / 4864

页数：3

共 10 条

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