MAGNETOTRANSPORT PROPERTIES OF P-TYPE (IN,MN)AS DILUTED MAGNETIC III-V SEMICONDUCTORS

被引：1010

作者：

OHNO, H ^{[1
]}

MUNEKATA, H ^{[1
]}

PENNEY, T ^{[1
]}

VONMOLNAR, S ^{[1
]}

CHANG, LL ^{[1
]}

机构：

[1] HOKKAIDO UNIV, DEPT ELECT ENGN, SAPPORO, HOKKAIDO 060, JAPAN

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.68.2664

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Magnetotransport properties of p-type (In,Mn)As, a new diluted magnetic semiconductor based on a III-V semiconductor, are studied. The interaction between the holes and the Mn 3d spins is manifested in the anomalous Hall effect, which dominates the Hall resistivity from low temperature (0.4 K) to nearly room temperature, and in the formation of partial ferromagnetic order below 7.5 K, which is a cooperative phenomenon related to carrier localization. The coexistence of remanent magnetization and unsaturated spins as well as the large negative magnetoresistance at low temperatures is explained by the formation of large bound magnetic polarons.

引用

页码：2664 / 2667

页数：4

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