III-V diluted magnetic semiconductor: Substitutional doping of Mn in InAs

被引：70

作者：

Soo, YL

Huang, SW

Ming, ZH

Kao, YH

Munekata, H

Chang, LL

机构：

[1] TOKYO INST TECHNOL,IMAGING SCI & ENGN LAB,YOKOHAMA,KANAGAWA 226,JAPAN

[2] HONG KONG UNIV SCI & TECHNOL,KOWLOON,HONG KONG

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.53.4905

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Local structures around Mn in In1-xMnxAs films grown by molecular-beam epitaxy have been studied by using Mn K-edge extended x-ray-absorption fine-structure (EXAFS) technique. Substitution of Mn atoms for the In sites is found in samples either grown at low substrate temperatures (near 200 degrees C) or with a low Mn concentration (about 1 at. %). This result represents a significant extension of an earlier EXAFS study and serves as direct experimental evidence for III-V diluted magnetic semiconductors obtained by substitutional doping Of Mn impurities in InAs.

引用

页码：4905 / 4909

页数：5

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