NEW DILUTED MAGNETIC SEMICONDUCTORS BASED ON III-V COMPOUNDS

被引：53

作者：

VONMOLNAR, S

MUNEKATA, H

OHNO, H

CHANG, LL

机构：

[1] IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1991年 / 93卷

关键词：

D O I：

10.1016/0304-8853(91)90361-D

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper focuses on the homogeneity of Mn ions in the new diluted magnetic semiconductor (DMS) In1-xMnxAs. It is demonstrated that, when grown at 200-degrees-C substrate temperature, the In compound produces a homogeneous alloy. The most extensive proof of this lies in detailed magnetization measurements. Supportive evidence comes from X-ray (lattice constant), optical (bandgap) and transport measurements.

引用

页码：356 / 364

页数：9

共 14 条

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