Ferromagnetism in Mn-doped Ge

被引：256

作者：

Cho, SG ^{[1
]}

Choi, S

Hong, SC

Kim, Y

Ketterson, JB

Kim, BJ

Kim, YC

Jung, JH

机构：

[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea

[2] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA

[3] Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea

[4] Pukyong Natl Univ, Dept Phys, Pusan 609737, South Korea

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.66.033303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have successfully fabricated highly (up to 6%) Mn-doped bulk Ge single crystals. The lattice constant increases linearly with Mn concentration due to the larger Mn atomic radius compared with Ge, strongly indicating that Mn ions are being incorporated into the host Ge lattice. Alloys with lower Mn concentrations showed paramagnetism due to localized magnetic ions. Ge0.94Mn0.06 showed ferromagnetic ordering at similar to285 K, as determined from temperature-dependent magnetization and resistance measurements. The coersive field was 1260 Oe at 250 K.

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页码：333031 / 333033

页数：3

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