Room-temperature ferromagnetism in chalcopyrite Mn-doped ZnSnAS2 single crystals

被引:139
作者
Choi, S
Cha, GB
Hong, SC
Cho, S [1 ]
Kim, Y
Ketterson, JB
Jeong, SY
Yi, GC
机构
[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
[2] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA
[3] Busan Natl Univ, Dept Phys, Pusan 609735, South Korea
[4] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea
关键词
magnetic semiconductor; ferromagnetism; chalcopyrite crystal structure; ZnSnAs2;
D O I
10.1016/S0038-1098(02)00094-7
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have successfully grown Mn-doped chalcopyrite ZnSnAs2 single crystals from the melt using the vertical-temperature-gradient Bridgman method. We have observed that Mn-doped ZnSnAs2 is ferromagnetic with a Curie temperature of 329 K. The coercive field is 18 Oe at 300 K. The calculated magnetic moment from the saturation magnetization was 3.63 mu(B) per Mn atom at 5 K. (C) 2002 Published by Elsevier Science Ltd.
引用
收藏
页码:165 / 167
页数:3
相关论文
共 16 条
  • [1] CHO SH, UNPUB
  • [2] From molecules to solids with the DMol3 approach
    Delley, B
    [J]. JOURNAL OF CHEMICAL PHYSICS, 2000, 113 (18) : 7756 - 7764
  • [3] Quantitative determination of the order parameter in epitaxial layers of ZnSnP2
    Francoeur, S
    Seryogin, GA
    Nikishin, SA
    Temkin, H
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (15) : 2017 - 2019
  • [4] DILUTED MAGNETIC SEMICONDUCTORS
    FURDYNA, JK
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) : R29 - R64
  • [5] Atomic displacements at a Σ3(111) grain boundary in BaTiO3:: A first-principles determination
    Geng, WT
    Zhao, YJ
    Freeman, AJ
    Delley, B
    [J]. PHYSICAL REVIEW B, 2001, 63 (06)
  • [6] Room-temperature ferromagnetism in transparent transition metal-doped titanium dioxide
    Matsumoto, Y
    Murakami, M
    Shono, T
    Hasegawa, T
    Fukumura, T
    Kawasaki, M
    Ahmet, P
    Chikyow, T
    Koshihara, S
    Koinuma, H
    [J]. SCIENCE, 2001, 291 (5505) : 854 - 856
  • [7] Room temperature ferromagnetism in novel diluted magnetic semiconductor Cd1-xMnxGeP2
    Medvedkin, GA
    Ishibashi, T
    Nishi, T
    Hayata, K
    Hasegawa, Y
    Sato, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (10A): : L949 - L951
  • [8] PREPARATION, ELECTRICAL-PROPERTIES AND ANNEALING OF ZNGEAS2
    MERCEY, B
    CHIPPAUX, D
    VIZOT, J
    DESCHANVRES, A
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1986, 47 (01) : 37 - 43
  • [9] Making nonmagnetic semiconductors ferromagnetic
    Ohno, H
    [J]. SCIENCE, 1998, 281 (5379) : 951 - 956
  • [10] MAGNETOTRANSPORT PROPERTIES OF P-TYPE (IN,MN)AS DILUTED MAGNETIC III-V SEMICONDUCTORS
    OHNO, H
    MUNEKATA, H
    PENNEY, T
    VONMOLNAR, S
    CHANG, LL
    [J]. PHYSICAL REVIEW LETTERS, 1992, 68 (17) : 2664 - 2667