Quantitative determination of the order parameter in epitaxial layers of ZnSnP2

被引:17
作者
Francoeur, S [1 ]
Seryogin, GA [1 ]
Nikishin, SA [1 ]
Temkin, H [1 ]
机构
[1] Texas Tech Univ, Dept Elect Engn, Lubbock, TX 79409 USA
关键词
D O I
10.1063/1.126240
中图分类号
O59 [应用物理学];
学科分类号
摘要
X-ray diffraction is applied to determine the degree of order in partially ordered epitaxial layers of ZnSnP2 grown on GaAs. The Bragg-Williams order parameter, used as a scaling coefficient for the structure factor of superstructure reflections, is extracted from the comparison of measured and calculated relative intensities of a set of carefully chosen reflections. The calculated diffraction patterns are obtained from the dynamical theory of x-ray diffraction. The effect of antiphase domains on the width of superstructure reflections is discussed. Order parameters up to 30% were measured. (C) 2000 American Institute of Physics. [S0003-6951(00)02315-9].
引用
收藏
页码:2017 / 2019
页数:3
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