PREPARATION, ELECTRICAL-PROPERTIES AND ANNEALING OF ZNGEAS2

被引：9

作者：

MERCEY, B

CHIPPAUX, D

VIZOT, J

DESCHANVRES, A

机构：

[1] ISMRA-Univ, Lab de Cristallographie,, Chimie et Physique des Solides,, Caen, Fr, ISMRA-Univ, Lab de Cristallographie, Chimie et Physique des Solides, Caen, Fr

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1986年 / 47卷 / 01期

关键词：

D O I：

10.1016/0022-3697(86)90174-5

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：37 / 43

页数：7

共 7 条

[1] SELF-ACTIVATED SEMICONDUCTIVITY IN CDS SINGLE CRYSTALS
BOER, KW
BOYN, R
GOEDE, O
[J]. PHYSICA STATUS SOLIDI, 1963, 3 (09): : 1684 - 1694
[2] ELECTRICAL-PROPERTIES OF H+-IRRADIATED P-ZNGEAS2
BRUDNYI, VN
POTAPOV, AI
RUD, YV
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 75 (01): : K73 - K76
[3] CONSTANTINESCU C, 1966, REV ROUM PHYS, V11, P607
[4] GORYUNOVA NA, 1965, ZH PRIKL KHIM, V38, P771
[5] ESR DETECTION OF ANTISITE LATTICE-DEFECTS IN GAP, CDSIP2, AND ZNGEP2
KAUFMANN, U
SCHNEIDER, J
RAUBER, A
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (05) : 312 - 313
[6] PREPARATION AND PROPERTIES OF ZNGEAS2
SCHOLL, FW
CORY, ES
[J]. MATERIALS RESEARCH BULLETIN, 1974, 9 (11) : 1511 - 1515
[7] van Der Pauw L. J., 1958, PHILIPS RES REP, V13, P1

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