PREPARATION AND PROPERTIES OF ZNGEAS2

被引：15

作者：

SCHOLL, FW

CORY, ES

机构：

[1] CORNELL UNIV,ITHACA,NY 14850

[2] ROCKWELL INT,SCI CTR,THOUSAND OAKS,CA 91360

来源：

MATERIALS RESEARCH BULLETIN | 1974年 / 9卷 / 11期

关键词：

D O I：

10.1016/0025-5408(74)90098-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1511 / 1515

页数：5

共 11 条

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[7] BAND-STRUCTURE OF ZNGEP2 AND ZNSIP2 - TERNARY COMPOUNDS WITH PSEUDODIRECT ENERGY GAPS [J].

SHAY, JL ;

TELL, B ;

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WERNICK, JH .

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[8] RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J].

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IRVIN, JC .

SOLID-STATE ELECTRONICS, 1968, 11 (06) :599-&

[9]

van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

[10]

WEAST RC, 1972, HDB CHEMISTRY PHYSIC

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