Manganese concentration and low-temperature annealing dependence of Ga1-xMnxAs by x-ray absorption spectroscopy -: art. no. 233201

被引：45

作者：

Ishiwata, Y ^{[1
]}

Watanabe, M

Eguchi, R

Takeuchi, T

Harada, Y

Chainani, A

Shin, S

Hayashi, T

Hashimoto, Y

Katsumoto, S

Iye, Y

机构：

[1] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan

[2] RIKEN, SPring 8, Mikazuki, Hyogo 6795143, Japan

[3] Tokyo Univ Sci, Dept Appl Phys, Tokyo 1628601, Japan

[4] Inst Plasma Res, Bhat 382428, Gandhinagar, India

[5] Japan Sci & Technol Corp, CREST, Tokyo 1710031, Japan

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.65.233201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Mn-site-projected electronic structure of the diluted magnetic semiconductors Ga1-xMnxAs (x=0.032, 0.038, 0.047, 0.052, 0.058) of as-grown and low-temperature (LT) annealed samples are systematically studied using high-resolution Mn 2p absorption spectroscopy. The study exhibits coexistence of the ferromagnetic Mn2+ ion and the paramagnetic Mn-As complex that transforms into the ferromagnetic component with LT annealing. The ratio of ferromagnetic to paramagnetic components is directly related to the x dependence of the hole density and ferromagnetic critical temperature.

引用

页码：1 / 4

页数：4

共 24 条

[1] Ferromagnetism and its stability in the diluted magnetic semiconductor (In,Mn)As [J].

Akai, H .

PHYSICAL REVIEW LETTERS, 1998, 81 (14) :3002-3005

[2] Magnetic circular dichroism studies of carrier-induced ferromagnetism in (Ga1-xMnx)As [J].

Beschoten, B ;

Crowell, PA ;

Malajovich, I ;

Awschalom, DD ;

Matsukura, F ;

Shen, A ;

Ohno, H .

PHYSICAL REVIEW LETTERS, 1999, 83 (15) :3073-3076

[3] 2P X-RAY ABSORPTION OF 3D TRANSITION-METAL COMPOUNDS - AN ATOMIC MULTIPLET DESCRIPTION INCLUDING THE CRYSTAL-FIELD [J].

DEGROOT, FMF ;

FUGGLE, JC ;

THOLE, BT ;

SAWATZKY, GA .

PHYSICAL REVIEW B, 1990, 42 (09) :5459-5468

[4] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F ;

Cibert, J ;

Ferrand, D .

SCIENCE, 2000, 287 (5455) :1019-1022

[5] Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F .

PHYSICAL REVIEW B, 2001, 63 (19)

[6] Effect of low-temperature annealing on transport and magnetism of diluted magnetic semiconductor (Ga, Mn)As [J].

Hayashi, T ;

Hashimoto, Y ;

Katsumoto, S ;

Iye, Y .

APPLIED PHYSICS LETTERS, 2001, 78 (12) :1691-1693

[7] Double resonance mechanism of ferromagnetism and magnetotransport in (Ga-Mn)As [J].

Inoue, J ;

Nonoyama, S ;

Itoh, H .

PHYSICAL REVIEW LETTERS, 2000, 85 (21) :4610-4613

[8] Metal-insulator transition and magnetotransport in III-V compound diluted magnetic semiconductors [J].

Iye, Y ;

Oiwa, A ;

Endo, A ;

Katsumoto, S ;

Matsukura, F ;

Shen, A ;

Ohno, H ;

Munekata, H .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 63 (1-2) :88-95

[9] Magnetism and metal-insulator transition in III-V based diluted magnetic semiconductors [J].

Katsumoto, S ;

Hayashi, T ;

Hashimoto, Y ;

Iye, Y ;

Ishiwata, Y ;

Watanabe, M ;

Eguchi, R ;

Takeuchi, T ;

Harada, Y ;

Shin, S ;

Hirakawa, K .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 84 (1-2) :88-95

[10] Theory of diluted magnetic semiconductor ferromagnetism [J].

König, J ;

Lin, HH ;

MacDonald, AH .

PHYSICAL REVIEW LETTERS, 2000, 84 (24) :5628-5631

← 1 2 3 →