Magnetism and metal-insulator transition in III-V based diluted magnetic semiconductors

被引：44

作者：

Katsumoto, S

Hayashi, T

Hashimoto, Y

Iye, Y

Ishiwata, Y

Watanabe, M

Eguchi, R

Takeuchi, T

Harada, Y

Shin, S

Hirakawa, K

机构：

[1] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan

[2] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 1068558, Japan

[3] Tokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan

[4] Japan Sci & Techol Corp, CREST, Tokyo 1710031, Japan

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 84卷 / 1-2期

关键词：

D O I：

10.1016/S0921-5107(01)00575-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report experiments on the magnetism and the transport in III-V based diluted magnetic semiconductors (Ga,Mn)As and (In,Mn)As. Heat treatment (annealing) at comparatively low temperatures (slightly above the growth th temperature) is unexpectedly found to be effective to improve the ferromagnetism and the metallic conduction. IR optical conductivity measurements and soft X-ray absorption spectroscopy reveal that the double exchange model is a convenient picture to describe the ferromagnetism. The transport in the vicinity of metal-insulator critical point was studied in detail by using the low-temperature annealing method. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：88 / 95

页数：8

共 24 条

[1] Ferromagnetism and its stability in the diluted magnetic semiconductor (In,Mn)As [J].