Effect of low-temperature annealing on transport and magnetism of diluted magnetic semiconductor (Ga, Mn)As

被引：238

作者：

Hayashi, T

Hashimoto, Y

Katsumoto, S

Iye, Y

机构：

[1] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan

[2] Japan Sci & Technol Corp, CREST, Tokyo 1710031, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 12期

关键词：

D O I：

10.1063/1.1352701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report improvements in the crystallinity of a III-V-based diluted magnetic semiconductor (Ga, Mn)As by heat treatment (annealing) after growth at comparatively low temperatures. This method can be used to raise the Curie temperature to 100 K without the need for severe optimization of growth conditions, as well as to adjust the material parameters to desired values. (C) 2001 American Institute of Physics.

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页码：1691 / 1693

页数：3

相关论文

共 14 条

[1] Ferromagnetism and its stability in the diluted magnetic semiconductor (In,Mn)As [J].

Akai, H .

PHYSICAL REVIEW LETTERS, 1998, 81 (14) :3002-3005

[2]

DeBoeck J, 1996, APPL PHYS LETT, V68, P2744, DOI 10.1063/1.115584

[3]

HAYASHI T, UNPUB

[4]

HIRAKAWA K, UNPUB PHYS REV B

[5] Ferromagnetic order induced by photogenerated carriers in magnetic III-V semiconductor heterostructures of (In,Mn)As/GaSb [J].

Koshihara, S ;

Oiwa, A ;

Hirasawa, M ;

Katsumoto, S ;

Iye, Y ;

Urano, C ;

Takagi, H ;

Munekata, H .

PHYSICAL REVIEW LETTERS, 1997, 78 (24) :4617-4620

[6] Transport properties and origin of ferromagnetism in (Ga,Mn)As [J].

Matsukura, F ;

Ohno, H ;

Shen, A ;

Sugawara, Y .

PHYSICAL REVIEW B, 1998, 57 (04) :R2037-R2040

[7] DILUTED MAGNETIC III-V SEMICONDUCTORS [J].

MUNEKATA, H ;

OHNO, H ;

VONMOLNAR, S ;

SEGMULLER, A ;

CHANG, LL ;

ESAKI, L .

PHYSICAL REVIEW LETTERS, 1989, 63 (17) :1849-1852

[8] EFFECT OF AS4/GA FLUX RATIO ON ELECTRICAL AND OPTICAL-PROPERTIES OF LOW-TEMPERATURE GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

OHAGAN, S ;

MISSOUS, M .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (12) :7835-7841

[9] (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs [J].

Ohno, H ;

Shen, A ;

Matsukura, F ;

Oiwa, A ;

Endo, A ;

Katsumoto, S ;

Iye, Y .

APPLIED PHYSICS LETTERS, 1996, 69 (03) :363-365

[10] Making nonmagnetic semiconductors ferromagnetic [J].

Ohno, H .

SCIENCE, 1998, 281 (5379) :951-956