Electron conduction in two-dimensional GaAs1-yNy channels -: art. no. 153305

被引:30
作者
Fowler, D [1 ]
Makarovsky, O
Patanè, A
Eaves, L
Geelhaar, L
Riechert, H
机构
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] Infineon Technol, Corp Res Photon, D-81730 Munich, Germany
关键词
D O I
10.1103/PhysRevB.69.153305
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the conductivity of a two-dimensional electron gas in modulation-doped n-type GaAs1-yNy/(AlGa)As quantum well heterostructures. We find that the nature of the electrical conduction in the GaAs1-yNy channel is band-like or hopping-like depending on N content, carrier concentration, and temperature. We show that when there is a sufficient carrier concentration in the channel, the conduction occurs through the extended conduction band states of GaAs1-yNy. In this band conduction regime the electron mobility is shown to be limited by electron scattering by nitrogen atoms. This mechanism dominates over inelastic collisions by phonons even at room temperature.
引用
收藏
页码:153305 / 1
页数:4
相关论文
共 17 条
[1]   ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].
DINGLE, R ;
STORMER, HL ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667
[2]   Magnetotunneling spectroscopy of dilute Ga(AsN) quantum wells -: art. no. 126802 [J].
Endicott, J ;
Patanè, A ;
Ibáñez, J ;
Eaves, L ;
Bissiri, M ;
Hopkinson, M ;
Airey, R ;
Hill, G .
PHYSICAL REVIEW LETTERS, 2003, 91 (12) :126802-126802
[3]   Intrinsic limits on electron mobility in dilute nitride semiconductors [J].
Fahy, S ;
O'Reilly, EP .
APPLIED PHYSICS LETTERS, 2003, 83 (18) :3731-3733
[4]   MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS [J].
GUNN, JB .
SOLID STATE COMMUNICATIONS, 1963, 1 (04) :88-91
[5]   THEORY OF SUBSTITUTIONAL DEEP TRAPS IN COVALENT SEMICONDUCTORS [J].
HJALMARSON, HP ;
VOGL, P ;
WOLFORD, DJ ;
DOW, JD .
PHYSICAL REVIEW LETTERS, 1980, 44 (12) :810-813
[6]   Theory of electronic structure evolution in GaAsN and GaPN alloys [J].
Kent, PRC ;
Zunger, A .
PHYSICAL REVIEW B, 2001, 64 (11)
[7]   Ga(As,N) layers in the dilute N limit studied by depth-resolved capacitance spectroscopy [J].
Krispin, P ;
Gambin, V ;
Harris, JS ;
Ploog, KH .
APPLIED PHYSICS LETTERS, 2002, 81 (21) :3987-3989
[8]   Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen [J].
Kurtz, SR ;
Allerman, AA ;
Seager, CH ;
Sieg, RM ;
Jones, ED .
APPLIED PHYSICS LETTERS, 2000, 77 (03) :400-402
[9]   Doping and carrier transport in Ga1-3xIn3xNxAs1-x alloys -: art. no. 113308 [J].
Li, W ;
Pessa, M ;
Toivonen, J ;
Lipsanen, H .
PHYSICAL REVIEW B, 2001, 64 (11)
[10]   Theory of enhanced bandgap non-parabolicity in GaNxAs1-x and related alloys [J].
Lindsay, A ;
O'Reilly, EP .
SOLID STATE COMMUNICATIONS, 1999, 112 (08) :443-447