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Electron conduction in two-dimensional GaAs1-yNy channels -: art. no. 153305
被引:30
作者:

Fowler, D
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Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

Makarovsky, O
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机构: Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

Patanè, A
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机构: Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

Eaves, L
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机构: Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

Geelhaar, L
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机构: Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

Riechert, H
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机构: Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
机构:
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] Infineon Technol, Corp Res Photon, D-81730 Munich, Germany
关键词:
D O I:
10.1103/PhysRevB.69.153305
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
We study the conductivity of a two-dimensional electron gas in modulation-doped n-type GaAs1-yNy/(AlGa)As quantum well heterostructures. We find that the nature of the electrical conduction in the GaAs1-yNy channel is band-like or hopping-like depending on N content, carrier concentration, and temperature. We show that when there is a sufficient carrier concentration in the channel, the conduction occurs through the extended conduction band states of GaAs1-yNy. In this band conduction regime the electron mobility is shown to be limited by electron scattering by nitrogen atoms. This mechanism dominates over inelastic collisions by phonons even at room temperature.
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页码:153305 / 1
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