Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen

被引：151

作者：

Kurtz, SR ^{[1
]}

Allerman, AA ^{[1
]}

Seager, CH ^{[1
]}

Sieg, RM ^{[1
]}

Jones, ED ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 03期

关键词：

D O I：

10.1063/1.126989

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron and hole transport in compensated InGaAsN (approximate to 2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and doping dependent, thermally activated Hall mobilities reveal a broad distribution of localized states. At this stage of development, lateral carrier transport appears to be limited by large scale (much greater than mean free path) material inhomogeneities, not a random alloy-induced mobility edge. (C) 2000 American Institute of Physics. [S0003-6951(00)04629-5].

引用

页码：400 / 402

页数：3

共 21 条

[1] ON THE CALCULATION OF ALLOY SCATTERING RELAXATION-TIME FOR TERNARY III-V AND II-VI SEMICONDUCTORS [J].