TEM characterization of Co-Al-O nano-granular TMR film

被引：5

作者：

Kamei, K ^{[1
]}

Yonemura, M ^{[1
]}

Hanafusa, K ^{[1
]}

机构：

[1] Sumitomo Met Ind Ltd, Elect Engn Lab, Amagasaki, Hyogo 6600891, Japan

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2001年 / 12卷 / 10期

关键词：

D O I：

10.1023/A:1012489503146

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Co-Al-O film was fabricated using the reactive r.f. magnetron sputtering technique. A maximum magnetoresistance (MR) of approximately 7% was established through optimizing the sputter deposition conditions such as sputter power and gas flow rate. TEM characterization of the film revealed a nano-granular structure that consisted of ferromagnetic grains with grain diameters on the order of several nm together with non-magnetic grain boundary layers with the thickness on the order of less than 1 nm. The large MR was attributed to electron tunneling thorough this very thin grain boundary layer between individual ferromagnetic grains. (C) 2001 Kluwer Academic Publishers.

引用

页码：569 / 574

页数：6