Preparation of anodic aluminum oxide templates on silicon substrates for growth of ordered nano-dot arrays

被引：20

作者：

Jeong, S. Y. ^{[1
,2
]}

An, M. C. ^{[1
]}

Cho, Y. S. ^{[1
]}

Kim, D. J. ^{[1
]}

Paek, M. C. ^{[2
]}

Kang, K. Y. ^{[2
]}

机构：

[1] Chungnam Natl Univ, Dept Nano Informat Syst Engn, Taejon 305764, South Korea

[2] Elect & Telecommun Res Inst, Tera Elect Device Team, Taejon 305606, South Korea

来源：

CURRENT APPLIED PHYSICS | 2009年 / 9卷

关键词：

Anodic aluminum oxide; Nano-template; HEXAGONAL PORE ARRAYS; FABRICATION;

D O I：

10.1016/j.cap.2008.08.030

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated anodic aluminum oxide (AAO) templates on silicon substrates for growth of ordered nano-dot arrays. An AAO template having pores of average diameter 60 nm and height 200 nm was successfully prepared by two-step anodic oxidation of an aluminum film on a silicon substrate. Optimum conditions of the process variables such as annealing time of the as-sputtered aluminum, temperature of the electrolyte solution, and the anodic potential have been experimentally determined. We have obtained silicon-wafer scale AAO templates of ordered arrays with easy handling, and have grown GaAs and GaN nano-dot arrays using the templates by MBE. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：S101 / S103

页数：3

共 11 条

[1] Self-ordered pore structure of anodized aluminum on silicon and pattern transfer [J].