Inductively coupled plasma etching of Ta2O5

被引：5

作者：

Lee, KP ^{[1
]}

Jung, KB

Singh, RK

Pearton, SJ

Hobbs, C

Tobin, P

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Motorola Inc, Adv Prod Res & Dev Lab, Austin, TX 78721 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 10期

关键词：

D O I：

10.1149/1.1392552

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A number of different plasma chemistries were examined for dry etching of thin film Ta2O5. Maximum etch rates of similar to 1200 Angstrom min(-1) were achieved with SF6 or Cl-2 discharges, while CH4/H-2/Ar and N-2/Ar produced rates an order of magnitude lower. The etch rates of Ta2O5 were always slower than those for Si under the same conditions in each of the different chemistries, and there was no effect of postdeposition annealing of the Ta2O5 on the resultant dry etch rates. (C) 1999 The Electrochemical Society. S0013-4651(99)03-054-2. All rights reserved.

引用

页码：3794 / 3798

页数：5

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