Fabrication and characterization of Si-MOSFET's with PECVD amorphous Ta2O5 gate insulator

被引：63

作者：

Autran, JL ^{[1
]}

Devine, R ^{[1
]}

Chaneliere, C ^{[1
]}

Balland, B ^{[1
]}

机构：

[1] FRANCE TELECOM,CTR NATL ETUD TELECOMMUN,F-38043 MEYLAN,FRANCE

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 09期

关键词：

D O I：

10.1109/55.622525

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon MOS transistors having amorphous Ta2O5 insulator gates have been fabricated. The Ta2O5 films were deposited using a low pressure (a few mtorr) plasma-enhanced CVD process in a microwave (2.45 Ghz) excited electron cyclotron resonance reactor, The source gas was TaF5. Electrical characteristics of p-channel Al gate transistors are presented.

引用

页码：447 / 449

页数：3

共 11 条

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