Muonium analog of hydrogen passivation:: Observation of the Mu+-Zn- reaction in GaAs -: art. no. 216403

被引：29

作者：

Chow, KH ^{[1
]}

Hitti, B

Kiefl, RF

Lichti, RL

Estle, TL

机构：

[1] Univ Alberta, Dept Phys, Edmonton, AB T6G 2J1, Canada

[2] TRIUMF, Vancouver, BC V6T 2A3, Canada

[3] Univ British Columbia, Canadian Inst Adv Res, Vancouver, BC V6T 1Z1, Canada

[4] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA

[5] Rice Univ, Dept Phys & Astron, Houston, TX 77251 USA

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 87卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.87.216403

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report direct detection of the formation and subsequent breakup of a complex containing positively charged muonium (Mu(+)) and a substitutional Zn-Ga acceptor in heavily doped p-type GaAs:Zn. Mu(+) diffuses above 200 K with a hop rate v = v(0)e(-Ev/kBT) where v(0) = (7.7 +/- 2.0) x 10(8) s(-1) and E-v = 0.15(4) eV. Above 350 K, it forms the complex with a trapping radius of 500 +/- 200 Angstrom. The Mu-Zn complex breaks up above 550 K with a dissociation energy of 0.88(7) eV and prefactor of (5 +/- 4) x 10(12) s(-1). Above 750 K, the cyclic reaction Mu(+) <----> Mu(0) takes place.

引用

页码：216403 / 1

页数：4

共 20 条

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