Ultrafast electron-phonon scattering in semiconductors studied by nondegenerate four-wave mixing

被引：30

作者：

Betz, M ^{[1
]}

Göger, G

Leitenstorfer, A

Ortner, K

Becker, CR

Böhm, G

Laubereau, A

机构：

[1] Tech Univ Munich, Dept Phys E11, D-85748 Garching, Germany

[2] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

[3] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.60.R11265

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nondegenerate four-wave-mixing allows one to monitor the femtosecond relaxation of free carriers in GaAs and CdTe at densities as low as 2 x 10(15) cm(-3). The energy relaxation time of electrons via LO-phonon emission is determined to be 240 +/- 20 fs in GaAs. In more polar CdTe, this time constant is found to be as short as 70 +/- 15 fs which is even shorter than the phonon oscillation period of 200 fs. [S0163-1829(99)51840-7].

引用

页码：11265 / 11268

页数：4

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