A spray pyrolysis route to the undoped ZnO layer of Cu(In,Ga)(S,Se)2 solar cells

被引：43

作者：

Gledhill, Sophie ^{[1
]}

Grimm, Alexander ^{[1
]}

Allsop, Nicholas ^{[1
]}

Koehler, Tristan ^{[1
]}

Camus, Christian ^{[1
]}

Lux-Steiner, Martha ^{[1
]}

Fischer, Christian-Herbert ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin, D-14109 Berlin, Germany

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 07期

关键词：

VNFHF; ZnO; Thin film solar cell; Spray pyrolysis; GROWTH;

D O I：

10.1016/j.tsf.2008.10.110

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The undoped ZnO in the window layer of Cu(In,Ga)(S,Se)(2) solar cells is deposited here by a non-vacuum spray pyrolysis method yielding solar cells of similar efficiencies to cells prepared with the standard sputtered layer. The spray pyrolysis method allows the undoped ZnO to be deposited in sequence on the same apparatus or in-line directly after deposition of the spray-'ILGAR' (ion layer gas reaction) In2S3 buffer layer. Thus it is highly suitable for manufacturing, not only is spray pyrolysis economical, avoiding the need for two target sputtering systems, but for monolithic integrated modules the second 'P2' scribe, carried out to interconnect cells, can be undertaken before sputtering permitting the highly doped ZnO:AI front contact to directly connect to the rear Mo back contact. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2309 / 2311

页数：3

共 18 条

[1] Spray-ILGAR indium sulfide buffers for Cu(In, Ga)(S, Se)2 solar cells [J].