Room temperature defect related electroluminescence from ZnO homojunctions grown by ultrasonic spray pyrolysis

被引：63

作者：

Du, G. T. ^{[1
]}

Liu, W. F.

Bian, J. M.

Hu, L. Z.

Liang, H. W.

Wang, X. S.

Liu, A. M.

Yang, T. P.

机构：

[1] Dalian Univ Technol, Dept Phys, State Key Lab Mat Modificat Laser Ion Electron Be, Dalian 116024, Peoples R China

[2] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Jililn, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 05期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2245217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO homojunction light-emitting diode was grown on single-crystal GaAs (100) substrate by ultrasonic spray pyrolysis. This diode was comprised of N-In codoped p-type ZnO and unintentionally doped n-type ZnO film. Ohmic contact on n-type ZnO layer and GaAs substrate was formed by Zn/Au and Au/Ge/Ni alloyed metal electrodes, respectively. An electroluminescence emission associated with defects was observed from the ZnO homojunction under forward current injection at room temperature. The I-V characteristics of the homojunction showed a threshold voltage of similar to 4 V under forward bias. (c) 2006 American Institute of Physics.

引用

页数：3

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