p-type ZnO films by monodoping of nitrogen and ZnO-based p-n homojunctions

被引：126

作者：

Bian, JM ^{[1
]}

Li, XM ^{[1
]}

Zhang, CY ^{[1
]}

Yu, WD ^{[1
]}

Gao, XD ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 18期

关键词：

D O I：

10.1063/1.1808229

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitrogen-doped p-type ZnO (ZnO:N) films have been achieved by ultrasonic spray pyrolysis at atmosphere. The high structural quality of the obtained films was confirmed by x-ray diffraction, scanning electron microscopy, and photoluminescence spectra. Hall-effect and Seebeck-effect measurements indicate that the obtained p-type ZnO film shows a low resistivity of 3.02x10(-2) Omega cm, high carrier concentration of 8.59x10(18) cm(-3), high mobility of 24.1 cm(2)/V s, and high Seebeck coefficient of 408.2 muV/K at room temperature. Furthermore, the two-layer structured ZnO p-n homojunctions were prepared by depositing n-type ZnO layer on p-type ZnO:N layer. The current-voltage curve derived from the two-layer structure clearly shows the typical rectifying characteristic of p-n junctions. (C) 2004 American Institute of Physics.

引用

页码：4070 / 4072

页数：3

共 13 条

[1] Synthesis and characterization of two-layer-structured ZnO p-n homojunctions by ultrasonic spray pyrolysis [J].