Synthesis and characterization of two-layer-structured ZnO p-n homojunctions by ultrasonic spray pyrolysis

被引：76

作者：

Bian, JM ^{[1
]}

Li, XM ^{[1
]}

Zhang, CY ^{[1
]}

Chen, LD ^{[1
]}

Yao, Q ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine M, Shanghai 200050, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 19期

关键词：

D O I：

10.1063/1.1739280

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The two-layer-structured ZnO p-n homojunctions were prepared on single-crystal Si (100) substrate by depositing undoped n-type ZnO film on N-In codoped p-type ZnO film using ultrasonic spray pyrolysis. The crystal structure and morphology of the obtained ZnO homojunctions were examined by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. The two-layer structure was confirmed by secondary ion mass spectroscopy depth profile analysis. The current-voltage (I-V) characteristics derived from the undoped ZnO/N-In codoped ZnO two-layer structure clearly show the rectifying characteristics of typical p-n junctions. (C) 2004 American Institute of Physics.

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页码：3783 / 3785

页数：3

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