Deposition and electrical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis

被引：322

作者：

Bian, JM ^{[1
]}

Li, XM ^{[1
]}

Gao, XD ^{[1
]}

Yu, WD ^{[1
]}

Chen, LD ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 04期

关键词：

D O I：

10.1063/1.1644331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The N-In codoped p-type ZnO films have been prepared by ultrasonic spray pyrolysis. X-ray photoelectron spectroscopy analysis confirmed the presence of nitrogen and indium in the codoped films, and the incorporation of indium causes the change in the chemical state of nitrogen, which promotes the formation of p-type conduction. Low resistivity of 1.7x10(-2) Omega cm, high carrier concentration of 2.44x10(18) cm(-3) and Hall mobility of 155 cm(2) V-1 s(-1) at room temperature for the codoped films were obtained. A conversion from p-type conduction to n type in a range of temperature has been identified by the measurement of Seebeck and Hall effect. (C) 2004 American Institute of Physics.

引用

页码：541 / 543

页数：3

共 8 条

[1] Anomalous barium filling fraction and n-type thermoelectric performance of BayCo4Sb12 [J].