Electrical and optical properties of p-type ZnO

被引:238
作者
Look, DC [1 ]
机构
[1] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA
关键词
D O I
10.1088/0268-1242/20/4/007
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
ZnO has ideal qualities for bright, efficient UV light emitting diodes and laser diodes, based on p-n junctions. However, while high quality n-type ZnO has been available for many years, the development of good p-type material is a much more recent phenomenon. The most successful acceptor dopants have been the group V elements, N, P and As; N substitutes on the O site, but the exact structures of the P and As acceptors have not yet been established. Resistivities as low as 0.4 Omega cm have been measured, and some UV heterojunction and homojunction LEDs have been fabricated. Optical fingerprints of p-type ZnO often include a photoluminescence line at 3.31 eV, and strong donor-bound exciton lines at 3.357 and 3.367 eV, both of which are well known from previous studies of n-type ZnO.
引用
收藏
页码:S55 / S61
页数:7
相关论文
共 57 条
  • [1] ZnO diode fabricated by excimer-laser doping
    Aoki, T
    Hatanaka, Y
    Look, DC
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (22) : 3257 - 3258
  • [2] Nitrogen-doped p-type ZnO layers prepared with H2O vapor-assisted metalorganic molecular-beam epitaxy
    Ashrafi, ABMA
    Suemune, I
    Kumano, H
    Tanaka, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (11B): : L1281 - L1284
  • [3] Formation of p-type ZnO film on InP substrate by phosphor doping
    Bang, KH
    Hwang, DK
    Park, MC
    Ko, YD
    Yun, I
    Myoung, JM
    [J]. APPLIED SURFACE SCIENCE, 2003, 210 (3-4) : 177 - 182
  • [4] The regulation of defect concentrations by means of separation layer in wide-band II-VI compounds
    Butkhuzi, TV
    Sharvashidze, MM
    Gamkrelidze, NM
    Gelovani, KV
    Khulordava, TG
    Kekelidze, NP
    Kekelidze, EE
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (07) : 575 - 580
  • [5] CLAFLIN B, 2004, UNPUB
  • [6] p-type conduction in transparent semiconductor ZnO thin films induced by electron cyclotron resonance N2O plasma
    Guo, XL
    Tabata, H
    Kawai, T
    [J]. OPTICAL MATERIALS, 2002, 19 (01) : 229 - 233
  • [7] Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source
    Guo, XL
    Tabata, H
    Kawai, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 2001, 223 (1-2) : 135 - 139
  • [8] ACCEPTOR-EXCITON COMPLEXES IN ZNO - A COMPREHENSIVE ANALYSIS OF THEIR ELECTRONIC STATES BY HIGH-RESOLUTION MAGNETO-OPTICS AND EXCITATION SPECTROSCOPY
    GUTOWSKI, J
    PRESSER, N
    BROSER, I
    [J]. PHYSICAL REVIEW B, 1988, 38 (14): : 9746 - 9758
  • [9] p-type behavior in phosphorus-doped (Zn,Mg)O device structures
    Heo, YW
    Kwon, YW
    Li, Y
    Pearton, SJ
    Norton, DP
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (18) : 3474 - 3476
  • [10] Transport properties of phosphorus-doped ZnO thin films
    Heo, YW
    Park, SJ
    Ip, K
    Pearton, SJ
    Norton, DP
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (06) : 1128 - 1130