Monte Carlo simulation of tunneling magnetoresistance in nanostructured materials

被引：70

作者：

Huang, ZG ^{[1
]}

Chen, ZG

Peng, K

Wang, DH

Zhang, FM

Zhang, WY

Du, YW

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Jiangsu Provincial Lab Nanotechnol, Nanjing 210093, Peoples R China

[3] Fujian Normal Univ, Dept Phys, Fuzhou 35007, Peoples R China

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.69.094420

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A two-level model of tunneling magnetoresistance (MR) containing coplay of the relative orientation of moments between clusters, the intrinsic characters of clusters, and the Coulomb blockade effect, is presented. Based on the Monte Carlo simulation, spin configurations, MR and resistivity as function of temperature and field were studied, respectively. Simulated results are found to be in good agreement with the recent experimental data. The unusual enhancement of MR is attributed to the interaction between the clusters and the intrinsic character of clusters. Although the Coulomb blockade effect plays little role on MR, it has an important effect on the resistivity at low temperature.

引用

页数：7

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