High-quality polycrystalline Si TFTs fabricated on stainless-steel foils by using sputtered Si films

被引:46
作者
Serikawa, T [1 ]
Omata, F
机构
[1] NTT Elect Corp, Tokyo 1940004, Japan
[2] NTT Corp, NTT Cyberspace Labs, Tokyo 1808585, Japan
关键词
low-temperature process; polycrystalline Si; sputtering; stainless steel; thin-film transistor;
D O I
10.1109/16.998590
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have developed a low-temperature fabrication process (S 200 degreesC for high-quality polycrystalline Si thin-film transistors (poly-Si TFTs) on flexible stainless-steel foils. The fabrication processes is realized through sputter deposition of thin films, including active-Si and gate-SiO2 films, crystallization of Si films by KrF excimer laser irradiation, and inductively coupled plasma hydrogenation. High-quality n- and p-channel poly-Si TFTs are successfully fabricated without suffering from problems of substrate bending, film ablation, or cracking in films. The resulting n- and p-channel poly-Si TFTs showed mobilities of 106 and 122 cm(2) /V . s, respectively. This paper describes the deposition and properties of the sputtered Si films and the fabrication process and electrical characteristics of the poly-SiTFTs.
引用
收藏
页码:820 / 825
页数:6
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