High-quality polycrystalline Si TFTs fabricated on stainless-steel foils by using sputtered Si films

被引：46

作者：

Serikawa, T ^{[1
]}

Omata, F

机构：

[1] NTT Elect Corp, Tokyo 1940004, Japan

[2] NTT Corp, NTT Cyberspace Labs, Tokyo 1808585, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 05期

关键词：

low-temperature process; polycrystalline Si; sputtering; stainless steel; thin-film transistor;

D O I：

10.1109/16.998590

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a low-temperature fabrication process (S 200 degreesC for high-quality polycrystalline Si thin-film transistors (poly-Si TFTs) on flexible stainless-steel foils. The fabrication processes is realized through sputter deposition of thin films, including active-Si and gate-SiO2 films, crystallization of Si films by KrF excimer laser irradiation, and inductively coupled plasma hydrogenation. High-quality n- and p-channel poly-Si TFTs are successfully fabricated without suffering from problems of substrate bending, film ablation, or cracking in films. The resulting n- and p-channel poly-Si TFTs showed mobilities of 106 and 122 cm(2) /V . s, respectively. This paper describes the deposition and properties of the sputtered Si films and the fabrication process and electrical characteristics of the poly-SiTFTs.

引用

页码：820 / 825

页数：6

共 23 条

[1] Nature of grain boundaries in laser crystallized polycrystalline silicon thin films [J].