Realisation of highly efficient 850nm top emitting resonant cavity light emitting diodes

被引：5

作者：

Bockstaele, R ^{[1
]}

Derluyn, J ^{[1
]}

Sys, C ^{[1
]}

Verstuyft, S ^{[1
]}

Moerman, I ^{[1
]}

Van Daele, P ^{[1
]}

Baets, R ^{[1
]}

机构：

[1] State Univ Ghent, IMEC, Dept Informat Technol, B-9000 Ghent, Belgium

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 18期

关键词：

D O I：

10.1049/el:19991052

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Highly efficient top emitting 850 nm resonant cavity LEDs (RCLEDs) with and without selectively oxidised current windows have been realised and compared. The oxidised RCLEDs have an increased efficiency, due to a larger carrier injection efficiency. The best devices show 14% overall quantum efficiency, and a voltage drop of 1.8V at 3mA drive current.

引用

页码：1564 / 1565

页数：2

共 5 条

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