MICROCAVITY ENHANCED VERTICAL-CAVITY LIGHT-EMITTING-DIODES

被引：13

作者：

KELLER, U ^{[1
]}

JACOBOVITZVESELKA, GR ^{[1
]}

CUNNINGHAM, JE ^{[1
]}

JAN, WY ^{[1
]}

TELL, B ^{[1
]}

BROWNGOEBELER, KF ^{[1
]}

LIVESCU, G ^{[1
]}

机构：

[1] AT&T BELL LABS,BREINIGSVILLE,PA 18031

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 24期

关键词：

D O I：

10.1063/1.109143

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We systematically studied microcavity enhancement an mode-coupling effects in photo- an electroluminescence of an AlGaAs/GaAs vertical-cavity light-emitting diode (LED) by continuously changing the microcavity resonance with respect to the quantum well band gap. At mode overlap we obtained maximum photo- and electroluminescence intensities and a minimum emitted linewidth of 4.6 nm at 836 nm with a FWHM divergence of 62-degrees. However, the electrical-to-optical efficiency was less than 1 muW/mA. Application issues for optical interconnects are presented.

引用

页码：3085 / 3087

页数：3

共 19 条

[1] OPTICALLY-COUPLED MIRROR QUANTUM-WELL INGAAS-GAAS LIGHT-EMITTING DIODE [J].