Molecular structure of E-BN

被引:45
作者
Olszyna, A
KonwerskaHrabowska, J
Lisicki, M
机构
关键词
boron nitride; molecular structure;
D O I
10.1016/S0925-9635(96)00716-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
E-BN layers were deposited on non-heated CaF2 and Si substrates using the method of electrostatic acceleration of h-BN powder in a high-voltage cascade accelerator. The phase compositions of the layers were examined by the XRD method - the values of d obtained were similar to those reported by Batzanov et al. [1]. IR examinations were conducted within the range 400-4000 cm(-1). The molecular structure of E-BN was modeled using a computer simulation (with the Hyper-Chem computer program) based on the results obtained. The model thus obtained differs from those known earlier for h-BN, w-BN and c-BN. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:617 / 620
页数:4
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