Electrical properties and microstructures of Pt/Ba0.5Sr0.5TiO3/SrRuO3 capacitors

被引：60

作者：

Izuha, M ^{[1
]}

Abe, K ^{[1
]}

Koike, M ^{[1
]}

Takeno, S ^{[1
]}

Fukushima, N ^{[1
]}

机构：

[1] TOSHIBA CO LTD,CTR RES & DEV,ENVIRONM ENGN LABS,SAIWAI KU,KAWASAKI,KANAGAWA 210,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 11期

关键词：

D O I：

10.1063/1.118590

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin film polycrystalline Ba0.5Sr0.5TiO3 capacitors employing conductive perovskite oxide SrRuO3 as a bottom electrode were fabricated on Si substrates by rf-magnetron sputtering. Dielectric constants of these capacitors were observed to be 206, 214, and 146 for 60, 40, and 20 nm Ba0.5Sr0.5TiO3 (BSTO) thicknesses, respectively. The lowest SiO2 equivalent thickness of 0.54 nm was obtained for 20-nm-thick BSTO capacitors; their leakage current density was less than 1 x 10(-7) A/cm(2) for +/- 1.8 V bias. The cross-sectional transmission electron microscope observation revealed that BSTO and SrRuO3 (SRO) formed continuous columnar grains and showed epitaxial growth at the interface of BSTO/SRO within each column; this microstructure of the capacitors was tentatively designated ''local epitaxial film.'' (C) 1997 American Institute of Physics.

引用

页码：1405 / 1407

页数：3

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