Nanoscale piezoresponse studies of ferroelectric domains in epitaxial BiFeO3 nanostructures

被引:39
作者
Hong, Seungbum [1 ]
Klug, Jeffrey A. [1 ,3 ]
Park, Moonkyu [1 ]
Imre, Alexandra [1 ,2 ]
Bedzyk, Michael J. [1 ,3 ,4 ,5 ]
No, Kwangsoo [6 ]
Petford-Long, Amanda [1 ]
Auciello, Orlando [1 ,2 ]
机构
[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
[2] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA
[3] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA
[4] Northwestern Univ, Dept Mat Sci, Evanston, IL 60208 USA
[5] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
[6] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
基金
美国国家科学基金会;
关键词
FILMS;
D O I
10.1063/1.3055412
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the dependence of the ferroelectric domain configuration and switching behavior on the shape (square versus round) of epitaxial BiFeO3 (BFO) nanostructures. We fabricated (001) oriented BFO(120 nm)/SrRuO3(SRO, 125 nm) film layers on (001) SrTiO3 single crystals by rf magnetron sputter deposition, and patterned them to square (500x500 nm(2)) and round (502 nm in diameter) shaped nanostructures by focused ion-beam lithography. The surface morphology and the crystalline structure of the nanostructures were characterized by scanning electron microscopy and x-ray diffraction, respectively, while the domain configuration was investigated using piezoelectric force microscopy. We found that the square-shaped nanostructures exhibit a single variant domain configuration aligned along the [(1) over bar1 (1) over bar] direction, whereas the round- shaped nanostructures exhibit seven variants of domain configuration along the [(1) over bar1 (1) over bar], [1 (1) over bar(1) over bar], [11 (1) over bar1], [111], [(1) over bar 11], [1(1) over bar1] and [(11) over bar1] directions. Moreover, local d(33) piezoelectric coefficient measurements showed hysteresis loops with a strong displacement in the voltage axis (strong imprint) for the square- shaped nanostructures, while the round- shaped ones exhibited more symmetric loops. These findings have critical implications for the development of nanocapacitors for gigabyte to terabyte nonvolatile ferroelectric memories. (c) 2009 American Institute of Physics. [DOI: 10.1063/1.3055412]
引用
收藏
页数:5
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