Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors

被引：17

作者：

Ahnood, Arman ^{[1
]}

Ghaffarzadeh, Khashayar ^{[1
]}

Nathan, Arokia ^{[1
]}

Servati, Peyman ^{[2
]}

Li, Flora ^{[3
]}

Esmaeili-Rad, Mohammad R. ^{[3
]}

Sazonov, Andrei ^{[3
]}

机构：

[1] UCL, London Ctr Nanotechnol, London WC1H 0AH, England

[2] Univ British Columbia, Vancouver, BC V6T 1Z4, Canada

[3] Univ Waterloo, Waterloo, ON N2L 3G1, Canada

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 16期

关键词：

D O I：

10.1063/1.2999590

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Contact resistance has a significant impact on the electrical characteristics of thin film transistors. It limits their maximum on-current and affects their subsequent behavior with bias. This distorts the extracted device parameters, in particular, the field-effect mobility. This letter presents a method capable of accounting for both the non-ohmic (nonlinear) and ohmic (linear) contact resistance effects solely based upon terminal I-V measurements. Applying our analysis to a nanocrystalline silicon thin film transistor, we demonstrate that contact resistance effects can lead to a twofold underestimation of the field-effect mobility. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2999590]

引用

页数：3

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