Contact resistance in organic thin film transistors

被引:142
作者
Blanchet, GB
Fincher, CR
Lefenfeld, M
Rogers, JA
机构
[1] DuPont Co Inc, Cent Res & Dev, Wilmington, DE 19880 USA
[2] Univ Illinois, Urbana, IL 61801 USA
关键词
D O I
10.1063/1.1639937
中图分类号
O59 [应用物理学];
学科分类号
摘要
This letter reports on the unexpected dependence of contact resistance on the dielectric layer for pentacene thin film transistors with printed organic conducting electrodes. While the intrinsic mobility is weakly reliant on the dielectric, the contact resistance does vary considerably with dielectric layer. We show that while morphological changes are not apparent, contact resistances vary by an order of magnitude. This result suggests that the barrier to charge injection may depend not only on interactions at the complex triple interface but also on the details of the electronic structure at the semiconductor/dielectric interface. (C) 2004 American Institute of Physics.
引用
收藏
页码:296 / 298
页数:3
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