ION-IMPLANTED CONTACTS TO A-SI-H THIN-FILM TRANSISTORS

被引：13

作者：

BARE, HF

NEUDECK, GW

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 07期

关键词：

D O I：

10.1109/EDL.1986.26426

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：431 / 433

页数：3

共 12 条

[1]

AST DG, 1984, SEMICONDUCT SEMIMET, V21, P115

[2] ETCHING PATTERNS IN AMORPHOUS-SILICON [J].

BARE, HF ;

NEUDECK, GW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (02) :239-241

[3] INTERACTION BETWEEN N-TYPE AMORPHOUS HYDROGENATED SILICON FILMS AND METAL-ELECTRODES [J].

ISHIHARA, S ;

HIRAO, T ;

MORI, K ;

KITAGAWA, M ;

OHNO, M ;

KOHIKI, S .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) :3909-3911

[4] EFFECT OF MECHANICAL STRESS ON AMORPHOUS SILICON TRANSISTORS. [J].

Jones, B.L. .

Journal of Non-Crystalline Solids, 1985, 77-78 Dec II :1405-1408

[5] THE EFFECTS OF ION-IMPLANTATION ON THE ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON [J].

KALBITZER, S ;

MULLER, G ;

LECOMBER, PG ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (04) :439-456

[6] THE CHARACTERISTICS AND PROPERTIES OF OPTIMIZED AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS [J].

MACKENZIE, KD ;

SNELL, AJ ;

FRENCH, I ;

LECOMBER, PG ;

SPEAR, WE .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (02) :87-92

[7]

MULLER G, 1977, 7TH P INT C AM LIQ S, P442

[8]

POWELL MJ, 1984, P SID, V25, P269

[9] ON THE QUALITY OF CONTACTS IN A-SI-H STAGGERED ELECTRODE THIN-FILM TRANSISTORS [J].

SCHROPP, REI ;

VELTKAMP, JWC ;

SNIJDER, J ;

VERWEY, JF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) :1757-1760

[10]

SCHROPP REI, 1986, COMMUNICATION

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