ETCHING PATTERNS IN AMORPHOUS-SILICON

[1] THIN-FILM FIELD-EFFECT TRANSISTORS INCORPORATING HYDROGENATED AMORPHOUS-SILICON PRODUCED BY RF MAGNETRON SPUTTERING [J]. THIN SOLID FILMS, 1983, 102 (04) : L43 - L46

[2] AST DG, 1984, SEMICONDUCT SEMIMET, V21, P115

[3] Fukai M., 1981, Amorphous semiconductor. Technologies & devices. 1982, P199

[4] Glang R., 1970, HDB THIN FILM TECHNO, P7, DOI [10.1149/1.2408101, DOI 10.1149/1.2408101]

[5] SELF-ALIGNMENT PROCESSED AMORPHOUS-SILICON RING OSCILLATORS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) : 224 - 224

[6] KERN W, 1978, THIN FILM PROCESSES, P438

[7] PROMISE AND CHALLENGE OF THIN-FILM SILICON APPROACHES TO ACTIVE MATRICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (05) : 525 - 532

[8] CHEMICAL ETCHING OF SILICON .2. THE SYSTEM HF, HNO3, H2O, AND HC2H3O2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (02) : 108 - 111

[9] CHEMICAL ETCHING OF SILICON .1. THE SYSTEM HF,HNO3, AND H2O [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (06) : 505 - 508

[10] APPLICATION OF AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS IN INTEGRATED-CIRCUITS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1981, 26 (02): : 83 - 86

[1] THIN-FILM FIELD-EFFECT TRANSISTORS INCORPORATING HYDROGENATED AMORPHOUS-SILICON PRODUCED BY RF MAGNETRON SPUTTERING [J]. THIN SOLID FILMS, 1983, 102 (04) : L43 - L46

[2] AST DG, 1984, SEMICONDUCT SEMIMET, V21, P115

[3] Fukai M., 1981, Amorphous semiconductor. Technologies & devices. 1982, P199

[4] Glang R., 1970, HDB THIN FILM TECHNO, P7, DOI [10.1149/1.2408101, DOI 10.1149/1.2408101]

[5] SELF-ALIGNMENT PROCESSED AMORPHOUS-SILICON RING OSCILLATORS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) : 224 - 224

[6] KERN W, 1978, THIN FILM PROCESSES, P438

[7] PROMISE AND CHALLENGE OF THIN-FILM SILICON APPROACHES TO ACTIVE MATRICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (05) : 525 - 532

[8] CHEMICAL ETCHING OF SILICON .2. THE SYSTEM HF, HNO3, H2O, AND HC2H3O2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (02) : 108 - 111

[9] CHEMICAL ETCHING OF SILICON .1. THE SYSTEM HF,HNO3, AND H2O [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (06) : 505 - 508

[10] APPLICATION OF AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS IN INTEGRATED-CIRCUITS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1981, 26 (02): : 83 - 86