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INTERACTION BETWEEN N-TYPE AMORPHOUS HYDROGENATED SILICON FILMS AND METAL-ELECTRODES
被引:30
作者
:
ISHIHARA, S
论文数:
0
引用数:
0
h-index:
0
ISHIHARA, S
HIRAO, T
论文数:
0
引用数:
0
h-index:
0
HIRAO, T
MORI, K
论文数:
0
引用数:
0
h-index:
0
MORI, K
KITAGAWA, M
论文数:
0
引用数:
0
h-index:
0
KITAGAWA, M
OHNO, M
论文数:
0
引用数:
0
h-index:
0
OHNO, M
KOHIKI, S
论文数:
0
引用数:
0
h-index:
0
KOHIKI, S
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1982年
/ 53卷
/ 05期
关键词
:
D O I
:
10.1063/1.331098
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:3909 / 3911
页数:3
相关论文
共 6 条
[1]
THERMAL EFFECTS ON INTEGEGRITY OF ALUMINUM TO SILICON CONTACTS IN SILICON INTEGRATED CIRCUITS
ANSTEAD, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
Goddard Soace Flight Center, National Aeronautics and Space Administration, Greenbelt, Md.
ANSTEAD, RJ
FLOYD, SR
论文数:
0
引用数:
0
h-index:
0
机构:
Goddard Soace Flight Center, National Aeronautics and Space Administration, Greenbelt, Md.
FLOYD, SR
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1969,
ED16
(04)
: 381
-
&
[2]
SOLID-STATE COLOR IMAGE SENSOR USING HYDROGENATED AMORPHOUS-SILICON
BAJI, T
论文数:
0
引用数:
0
h-index:
0
BAJI, T
SHIMOMOTO, Y
论文数:
0
引用数:
0
h-index:
0
SHIMOMOTO, Y
MATSUMARU, H
论文数:
0
引用数:
0
h-index:
0
MATSUMARU, H
KOIKE, N
论文数:
0
引用数:
0
h-index:
0
KOIKE, N
AKIYAMA, T
论文数:
0
引用数:
0
h-index:
0
AKIYAMA, T
SASANO, A
论文数:
0
引用数:
0
h-index:
0
SASANO, A
TSUKADA, T
论文数:
0
引用数:
0
h-index:
0
TSUKADA, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1982,
21
(01)
: 269
-
273
[3]
CONTACT RESISTANCE AND CONTACT RESISTIVITY
BERGER, HH
论文数:
0
引用数:
0
h-index:
0
BERGER, HH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(04)
: 507
-
&
[4]
BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[5]
ELECTRICAL AND STRUCTURAL-PROPERTIES OF PHOSPHOROUS-DOPED GLOW-DISCHARGE SI-F-H AND SI-H FILMS
MATSUDA, A
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
MATSUDA, A
YAMASAKI, S
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
YAMASAKI, S
NAKAGAWA, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
NAKAGAWA, K
OKUSHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
OKUSHI, H
TANAKA, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TANAKA, K
IIZIMA, S
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
IIZIMA, S
MATSUMURA, M
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
MATSUMURA, M
YAMAMOTO, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
YAMAMOTO, H
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(06)
: L305
-
L308
[6]
WINDOW EFFECTS OF HYDROGENATED AMORPHOUS SILICON-CARBIDE IN A P-I-N A-SI SOLAR-CELL
TAWADA, Y
论文数:
0
引用数:
0
h-index:
0
TAWADA, Y
KONDO, M
论文数:
0
引用数:
0
h-index:
0
KONDO, M
OKAMOTO, H
论文数:
0
引用数:
0
h-index:
0
OKAMOTO, H
HAMAKAWA, Y
论文数:
0
引用数:
0
h-index:
0
HAMAKAWA, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1982,
21
(01)
: 297
-
303
←
1
→
共 6 条
[1]
THERMAL EFFECTS ON INTEGEGRITY OF ALUMINUM TO SILICON CONTACTS IN SILICON INTEGRATED CIRCUITS
ANSTEAD, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
Goddard Soace Flight Center, National Aeronautics and Space Administration, Greenbelt, Md.
ANSTEAD, RJ
FLOYD, SR
论文数:
0
引用数:
0
h-index:
0
机构:
Goddard Soace Flight Center, National Aeronautics and Space Administration, Greenbelt, Md.
FLOYD, SR
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1969,
ED16
(04)
: 381
-
&
[2]
SOLID-STATE COLOR IMAGE SENSOR USING HYDROGENATED AMORPHOUS-SILICON
BAJI, T
论文数:
0
引用数:
0
h-index:
0
BAJI, T
SHIMOMOTO, Y
论文数:
0
引用数:
0
h-index:
0
SHIMOMOTO, Y
MATSUMARU, H
论文数:
0
引用数:
0
h-index:
0
MATSUMARU, H
KOIKE, N
论文数:
0
引用数:
0
h-index:
0
KOIKE, N
AKIYAMA, T
论文数:
0
引用数:
0
h-index:
0
AKIYAMA, T
SASANO, A
论文数:
0
引用数:
0
h-index:
0
SASANO, A
TSUKADA, T
论文数:
0
引用数:
0
h-index:
0
TSUKADA, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1982,
21
(01)
: 269
-
273
[3]
CONTACT RESISTANCE AND CONTACT RESISTIVITY
BERGER, HH
论文数:
0
引用数:
0
h-index:
0
BERGER, HH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(04)
: 507
-
&
[4]
BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[5]
ELECTRICAL AND STRUCTURAL-PROPERTIES OF PHOSPHOROUS-DOPED GLOW-DISCHARGE SI-F-H AND SI-H FILMS
MATSUDA, A
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
MATSUDA, A
YAMASAKI, S
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
YAMASAKI, S
NAKAGAWA, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
NAKAGAWA, K
OKUSHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
OKUSHI, H
TANAKA, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TANAKA, K
IIZIMA, S
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
IIZIMA, S
MATSUMURA, M
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
MATSUMURA, M
YAMAMOTO, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
YAMAMOTO, H
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(06)
: L305
-
L308
[6]
WINDOW EFFECTS OF HYDROGENATED AMORPHOUS SILICON-CARBIDE IN A P-I-N A-SI SOLAR-CELL
TAWADA, Y
论文数:
0
引用数:
0
h-index:
0
TAWADA, Y
KONDO, M
论文数:
0
引用数:
0
h-index:
0
KONDO, M
OKAMOTO, H
论文数:
0
引用数:
0
h-index:
0
OKAMOTO, H
HAMAKAWA, Y
论文数:
0
引用数:
0
h-index:
0
HAMAKAWA, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1982,
21
(01)
: 297
-
303
←
1
→