Self-organized growth of Fe nanowire array on H2O/Si(100)(2 x n)

被引:31
作者
Kida, A [1 ]
Kajiyama, H [1 ]
Heike, S [1 ]
Hashizume, T [1 ]
Koike, K [1 ]
机构
[1] Hitachi Ltd, Adv Res Lab, Hatoyama, Saitama 3500395, Japan
关键词
D O I
10.1063/1.124441
中图分类号
O59 [应用物理学];
学科分类号
摘要
By evaporating Fe on to a water-terminated Si(100)(2xn) surface, we formed an Fe wire array reflecting the 2xn surface reconstruction. The average wire width was 2 nm and the period was 3 nm. The formation was caused by the deposited Fe atoms diffusing over the water-terminated flat area and being trapped at dimer vacancy lines. This array is applicable to magnetic devices. (C) 1999 American Institute of Physics. [S0003-6951(99)03930-3].
引用
收藏
页码:540 / 542
页数:3
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