Deep-level defect characteristics in pentacene organic thin films

被引：140

作者：

Yang, YS ^{[1
]}

Kim, SH

Lee, JI

Chu, HY

Do, LM

Lee, H

Oh, J

Zyung, T

Ryu, MK

Jang, MS

机构：

[1] Elect & Telecommun Res Inst, Taejon 305350, South Korea

[2] Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 09期

关键词：

D O I：

10.1063/1.1459117

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Organic thin-film transistors using the pentacene as an active electronic material have shown the mobility of 0.8 cm(2)/V s and the grains larger than 1 mum. To study the characteristics of electronic charge concentrations and the interface traps of the pentacene thin films, the capacitance properties were measured in the metal/insulator/organic semiconductor structure device by employing the capacitance-voltage and deep-level transient spectroscopy (DLTS) measurements. Based on the DLTS measurements, the concentrations and the energy levels of hole and electron traps in the obtained pentacene films were formed to be approximately 4.2x10(15) cm(-3) at E-v+0.24 eV, 9.6x10(14) cm(-3) at E-v+1.08 eV, 6.5x10(15) cm(-3) at E-v+0.31 eV and 2.6x10(14) cm(-3) at E-c-0.69 eV. (C) 2002 American Institute of Physics.

引用

页码：1595 / 1597

页数：3

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